Resist composition and patterning process using the same

ABSTRACT

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

CROSS-REFERENCE TO RELATED APPLICATION

This non-provisional application claims priority under 35 U.S.C. §119(a)on Patent Application No. 2006-035111 filed in Japan on Feb. 13, 2006,the entire contents of which are hereby incorporated by reference.

TECHNICAL FIELD

This invention relates to positive resist compositions for use in thephotolithography, especially bilayer resist process. More particularly,it relates to positive photoresist compositions intended for thephotolithography using deep-ultraviolet or the lithography using x-rayor electron beam, which compositions are effective in preventing patterncollapse by swelling and have resistance to oxygen-based gas plasmaetching; and a patterning process using the resist compositions.

BACKGROUND OF THE INVENTION

In the drive for higher integration and operating speeds in LSI devices,the pattern rule is made drastically finer. Under the miniaturizingtrend, the lithography has achieved formation of finer patterns by usinga light source with a shorter wavelength and by a choice of a properresist composition for the shorter wavelength. Predominant among othersare positive resist compositions which are used as a single layer. Thesesingle layer positive resist compositions are based on resins possessinga structure having resistance to etching with chlorine or fluorine gasplasma and provided with a resist mechanism that exposed areas becomedissolvable. Typically, the resist composition is coated on aprocessable substrate and exposed to a pattern of light, after which theexposed areas of the resist coating are dissolved to form a pattern.Then, the substrate can be processed by etching with the remainingresist pattern serving as an etching mask.

In an attempt to achieve a finer feature size, i.e., to reduce thepattern width with the thickness of a resist coating kept unchanged, theresist coating becomes low in resolution performance. If the resistcoating is developed with a liquid developer to form a pattern, theso-called “aspect ratio” (depth/width) of the resist pattern becomes toohigh, resulting in pattern collapse. For this reason, theminiaturization is accompanied by a thickness reduction of the resistcoating (thinner coating). On the other hand, with the progress of theexposure wavelength toward a shorter wavelength, the resin in resistcompositions is required to have less light absorption at the exposurewavelength. In response to changes from i-line to KrF and to ArF, theresin has made a transition from novolac resins to polyhydroxystyreneand to acrylic resins. Actually, the etching rate under theabove-indicated etching conditions has been accelerated. This suggeststhe inevitableness that a processable substrate is etched through athinner resist coating having weaker etching resistance. It is urgentlyrequired to endow the resist coating with etching resistance.

Meanwhile, a process known as multilayer resist process was developed inthe art for processing a (processable) substrate by etching. The processuses a resist coating which has weak etching resistance under theetching conditions for the substrate, but is capable of forming a finerpattern, and an intermediate coating which has resistance to etching forprocessing the substrate and can be patterned under the conditions towhich the resist coating is resistant. Once the resist pattern istransferred to the intermediate coating, the substrate is processed byetching through the pattern-transferred intermediate coating as anetching mask. A typical process uses a silicon-containing resin as theresist composition and an aromatic resin as the intermediate coating. Inthis process, after a pattern is formed in the silicon-containing resin,oxygen-reactive ion etching is carried out. Then the silicon-containingresin is converted to silicon oxide having high resistance to oxygenplasma etching, and at the same time, the aromatic resin is readilyetched away where the etching mask of silicon oxide is absent, wherebythe pattern of the silicon-containing resin is transferred to thearomatic resin layer. Unlike the single layer resist coating, thearomatic resin need not have light transmittance at all, allowing foruse of a wide variety of aromatic resins having high resistance toetching with fluorine or chlorine gas plasma. Using the aromatic resinas the etching mask, the substrate to be processed can be etched withfluorine or chlorine gas plasma.

With respect to the bilayer resist process, active studies were made onthe exposure to the radiation (193 nm) of ArF excimer laser andradiation of shorter wavelength where aromatic resins can be no longerused, and several reports have already been made. For example, JP-A10-324748 and JP-A 11-302382 disclose a siloxane polymer having carboxylgroup-containing, non-aromatic monocyclic or polycyclic hydrocarbongroups or bridged cyclic hydrocarbon groups on side chains wherein atleast some of the carboxyl groups are substituted with acid labilegroups, for example, a siloxane polymer in which a norbornyl grouphaving a t-butoxycarbonyl group at 5-position is bonded to a siliconatom, and a resist composition comprising the polymer. Allegedly thisresist composition is less absorptive to KrF (248 nm) excimer laser orArF excimer laser radiation, forms a pattern of good profile, and isimproved in sensitivity, resolution and dry etching resistance. Also,JP-A 2002-055346 and JP-A 2002-268227 disclose that silicone-containingpolymers having fluorinated alcohol incorporated therein are lessabsorptive at the wavelength (157 nm) of F₂ laser and improved insensitivity, resolution and plasma etching resistance.

For the technology intended to improve resolution by reducing thewavelength of an exposure light source, there have been reportedcompositions using fluorinated siloxane polymers having less absorptionat the exposure wavelength of F₂ laser. For example, JP-A 2002-220471discloses that a radiation-sensitive resin composition comprising apolysiloxane having a specific acid-assisted leaving group linked to asilicon atom via at least two bicyclo[2.2.1]heptane rings is useful inthat it is improved in dry etching resistance and highly transparent tothe radiation of F₂ laser. Also, JP-A 2002-278073, JP-A 2003-20335, andJP-A 2003-173027 disclose resist compositions comprising siloxanepolymers, featuring minimized absorption of ArF excimer laser radiationand a high resolution. In particular, JP-A 2003-20335 describes thathigh transparency even to F₂ laser wavelength is achieved by introducingfluorine. With respect to the technique of improving resolution byforming a thinner coating of resist material, JP-A 2001-215714 disclosesthat a silicon-containing polymer having a viscosity in a specific rangeenables to form a thinner resist coating while maintaining in-planeuniformity in the resist coating.

Among the recent studies on single layer resist coatings where attemptswere made to form a finer pattern, it was reported as the cause ofpattern collapse that the polymer undergoes substantial swellingimmediately before dissolution during development, which inhibitsformation of a finer pattern. One effective measure for preventing suchswell is to introduce a unit containing a hydroxyl group having anappropriate increased acidity due to fluorine substitution at proximatepositions, into a resin as a polar group. See H. Ito et al., Journal ofPhotopolymer Science and Technology, Vol. 15, No. 4 (2002), 591-602. Thepattern collapse is a common problem to silicon-containing resistcompositions comprising silicone resins as a base polymer. There is apossibility that the high resolution of the aforementioned polysiloxanepolymer be accompanied by this effect.

However, in an actual practice, an attempt to transfer a pattern to anaromatic resin organic coating using a fluorine-rich resin as an etchingmask revealed that its resistance to oxygen-reactive etching is farbelow the expectation. There is a need for further improvement inresistance to etching under these conditions.

DISCLOSURE OF THE INVENTION

An object of the present invention is to provide a siliconeresin-containing resist composition for the bilayer process whichenables to form a finer pattern by minimizing the pattern collapse byswelling and which exhibits improved resistance to the etching used inthe pattern transfer to an underlying organic film; and a patterningprocess using the resist composition.

The inventors have found that a resist composition having highresolution and acceptable resistance to the etching conditionsassociated with an aromatic organic film is obtainable by introducinginto a silicone resin constituting a resist composition, threestructural units: a carboxylic acid protected with an acid labile groupfor acquiring a high dissolution contrast for affording a highresolution, a hydroxyl group with fluorine substitution at proximatepositions for preventing swelling, and a lactone structure for enhancingswelling prevention and preventing the etching resistance from loweringand especially, a lactone structure having a five or six-membered ringskeleton.

Accordingly, the present invention provides a resist composition and apatterning process as defined below.

In one aspect, the present invention provides a resist compositioncomprising (A) a silicone resin, (B) an acid generator, (C) an organicnitrogen-containing compound, and (D) an organic solvent. The siliconeresin (A) is obtained through cohydrolytic condensation of a mixturecomprising hydrolyzable silane monomers having the general formulae (1),(2) and (3):

wherein R¹, R², and R³ each are hydrogen, fluorine, C₁-C₄ alkyl or C₁-C₄fluoroalkyl group, at least one of R¹, R², and R³ contains fluorine, R⁴is a C₁-C₆ hydrocarbon group with a straight, branched or cyclicstructure; R⁵ is a C₃-C₂₀ organic group with a straight, branched,cyclic or polycyclic structure, which has a carboxyl group protectedwith an acid-decomposable protecting group as a functional group andwhich may further contain a halogen, oxygen or sulfur atom, R⁶ is asdefined for R⁴; R⁷ is a C₄-C₁₆ organic group which has a lactone ring asa functional group and which may further contain a halogen, oxygen orsulfur atom, R⁸ is as defined for R⁴; X is hydrogen, chlorine, bromine,or a straight, branched or cyclic C₁-C₆ alkoxy group; p is 0 or 1, q is0 or 1, and r is 0 or 1.

In a preferred embodiment, the silane monomer of formula (1) is a silanemonomer having the structure (4):

wherein R⁴ and X are as defined above, and n is 0 or 1.

In a preferred embodiment, R in formula (3) is an organic group havingan alicyclic structure and a 5-membered lactone structure bondedthereto, and the silicon atom is bonded to one of carbon atoms in thealicyclic structure. The preferred silane monomer of formula (3) is asilane monomer having the structure (5) or (6):

wherein Y is an oxygen atom, sulfur atom or methylene group, R⁸ and Xare as defined above, n is 0 or 1, and m is 0 or 1.

In a preferred embodiment, the mixture further comprises a hydrolyzablemonomer having at least two hydrolyzable substituent groups other thanformulae (1), (2) and (3). Typically, the mixture may further comprise acompound having the general formula (7):

SiX₄  (7)

wherein X is as defined above.

In another aspect, the invention provides a pattern forming processcomprising the steps of forming a pattern on an aromatic-containingresin film using the resist composition defined above, and etching theresin film through the resulting pattern as an etching mask for therebypatterning the resin film. Typically, the etching step uses a gas plasmacontaining oxygen.

BENEFITS OF THE INVENTION

As compared with a prior art resist composition using as a polar groupan alcohol whose proximate carbon atom is fluorinated, the resistcomposition of the invention exhibits at least equal resolution. At thesame time, it overcomes the problem that the prior art resistcomposition fails to establish a selective etching ratio between theresist and an underlying film of organic material during oxygen reactiveetching. Therefore, the resist composition of the invention isadvantageously used in the bilayer resist process using ArF exposure.

It is noted that the phrase “C₁-C₄,” as used herein, for example, is acarbon number range ranging from 1 to 4.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The resist composition of the invention comprises (A) a silicone resin,(B) an acid generator, (C) an organic nitrogen-containing compound, and(D) an organic solvent.

The silicone resin (A) is obtained through cohydrolytic condensation ofa mixture comprising three silane monomers as essential components. Thatis, the mixture comprises hydrolyzable silane monomers having thegeneral formulae (1), (2), and (3).

Herein R¹, R², and R³ each are a hydrogen atom, fluorine atom, C₁-C₄alkyl or C₁-C₄ fluoroalkyl group, and at least one of R¹, R², and R³contains fluorine. R⁴ is a C₁-C₆ hydrocarbon group having a straight,branched or cyclic structure.

R³ is a C₃-C₂₀ organic group having a straight, branched, cyclic orpolycyclic structure, which has a carboxyl group protected with anacid-decomposable protecting group as a functional group and which mayfurther contain a halogen, oxygen or sulfur atom in addition to thecarboxyl group. R⁶ is as defined for R⁴.

R⁷ is a C₄-C₁₆ organic group which has a lactone ring as a functionalgroup and which may further contain a halogen, oxygen or sulfur atom inaddition to the lactone ring. R⁸ is as defined for R⁴.

X is a hydrogen atom, chlorine atom, bromine atom, or straight, branchedor cyclic C₁-C₆ alkoxy group. The subscript p is 0 or 1, q is 0 or 1,and r is 0 or 1.

The unit having formula (1) is incorporated as a polar group capable ofcontrolling swell. It contributes to this effect that unlike ordinaryalcohols, the hydroxyl group on norbornane ring affords an adequateacidity because the density of electrons on oxygen is reduced due to thestrong attraction of electrons by fluorine atoms bonded at proximatepositions. A number of such fluorine-substituted alcohol derivativeshave already been reported. A silane monomer can be produced byeffecting hydrosilylation between such a derivative having anunsaturated bond and a SiH group-containing silane. Of the monomersbelonging to this unit, a choice of a single monomer may be made or amixture of two or more monomers may be used. Some typical examples aregiven below.

In the unit having formula (2), R⁵ is a side chain having carboxylicacid protected with an acid labile group (i.e., carboxyl group protectedwith an acid-decomposable protecting group), which functions toestablish differential dissolution between exposed and unexposed areas.The acid labile group is a technical term generally used in theresist-related art. The acid labile group with which a functional groupis protected functions such that when a strong acid is generated from aphotoacid generator upon exposure, the bond between the acid labilegroup and the functional group is scissored under the catalysis of thestrong acid. As a result of scission, carboxylic acid is regeneratedherein. The protecting group used herein may be any of well-knowngroups. When carboxylic acid is to be protected, the preferredprotecting groups are C₄-C₂₀ tertiary alkyl groups, C₃-C₁₈ trialkylsilylgroups, and C₄-C₂₀ oxoalkyl groups. Of the tertiary alkyl groups, thosetertiary alkyl groups in which substituent groups on a tertiary carbonatom are substituted so as to form a 5- to 7-membered ring with thattertiary carbon and those tertiary alkyl groups in which a carbon chainbonded to a tertiary carbon atom has a branched or cyclic structure aremost preferred because they afford high resolution.

The side chain bearing carboxylic acid to be protected is a C₃-C₂₀organic group with a straight, branched, cyclic or polycyclic structurewhich may contain a halogen, oxygen or sulfur atom. As in the previouscase, this monomer is also readily obtainable by hydrosilylation of aprotected carboxylic acid derivative having an unsaturated carbon bondwith an SiH group-containing silane. Of these, those monomers in whichboth silicon and a protected carboxyl group are in direct bond with anorbornane ring or tetracyclododecene ring are most preferred becausethey afford high resolution. Preferred examples of these units are givenbelow.

Preferred examples of protecting groups:

R⁹: C₁-C₆ straight, branched or cyclic alkyl

R¹⁰: C₂-C₆ straight, branched or cyclic alkyl, norbornyl or adamantylMe: methyl

R¹¹: C₁-C₆ straight or branched alkyl

-   -   Preferred examples of carboxylic acid protected with the        protecting group which is a silicone monomer side chain:

R¹²: hydrogen, fluorine, methyl or trifluoromethyl Prot.: protectinggroup

R¹³: hydrogen, fluorine, methyl or trifluoromethyl Prot.: protectinggroup

Like the unit of formula (1), for the unit of formula (2), a singlemonomer or a mixture of monomers belonging to this unit may be used.

The unit of formula (3) ensures that the silicone resin has a necessarypolarity and serves as a second polar group functioning to reduce thenecessary quantity of the unit of formula (2). With respect to the polargroup, a number of polar groups including hydroxy, carbonyloxyalkyl,carboxyl and carbonate groups have been disclosed. An actual attempt tocombine the unit of formula (1) with the unit of formula (2) failed toprovide such an effect as exerted by acrylic acid polymers for thesingle layer use, that is, failed to provide high resolution. Bycontrast, the additional use of the lactone structure-bearing unithaving formula (3) is successful in establishing both polarity and highresolution. The most simple routes for introducing a lactone structureinclude a route of using a bromine-substituted lactone, extending astraight chain linker from the lactone, and deriving it to a siliconemonomer and another synthesis route of hydrosilylation reaction of anSiH group-containing silane and an unsaturated cyclic lactone. Thesilane monomers having a lactone structure which have been reportedinclude those monomers having lactone incorporated in a cyclicstructure, those monomers having a linker, and those monomers in whichlactone is linked to a cyclic structure via a linker (see JP-A2002-268227). Of these, the monomers having an alicyclic structure andfurther a five-membered lactone structure bonded thereto, and having aside chain in which a silicon atom is bonded to one of carbon atomswithin the alicyclic structure are most preferred because the highestresolution is accomplished.

Two silicone monomer side chains affording the best resolution areillustrated below.

Herein Y is an oxygen atom, sulfur atom or methylene group, R⁸ and X areas defined above, n is 0 or 1, and m is 0 or 1.

Of the above-illustrated compounds of the general formula (5), thosecompounds wherein Y is oxygen are more preferred as the side chain foruse in the inventive composition because of a more polar effect. Of theabove-illustrated compounds of the general formula (6), those compoundswherein m is 0 and those compounds wherein m is 1 may be used alone orin admixture.

Like the units of formulae (1) and (2), for the unit of formula (3), asingle monomer or a mixture of monomers belonging to this unit may beused.

The monomers of the general formulae (1), (2) and (3) having theaforementioned three functions, respectively, which are used incohydrolytic condensation reaction may be monomers having two X's(referred to as divalent monomers, hereinafter) or monomers having threeX's (referred to as trivalent monomers, hereinafter). X is ahydrolyzable substituent group selected from among hydrogen, chlorine,bromine, and straight, branched or cyclic C₁-C₆ alkoxy groups. X in onemonomer molecule may be one selected from the foregoing, or a mixture ofdifferent hydrolyzable groups. The situation where p, q or r is 0 meanstrivalent and the situation where p, q or r is 1 means divalent. Theremay be used either divalent or trivalent monomers or mixtures thereof.When divalent monomers account for 50 mol % or more based on the entiremonomers of formulae (1), (2) and (3), a silicone resin resulting fromcondensation of these monomers is unlikely to solidify and thusdifficult to purify. For this reason, it is recommended to use trivalentmonomers in an amount of more than 50 mol % based on the entiremonomers. It is preferred that X be alkoxy groups, especially methoxyand ethoxy.

When the divalent monomer is used, the other side chain R⁴, R⁶ or R⁸from silicon may be selected from simple groups because no particularfunction is assigned thereto. Since a carbon number in excess of 6 tendsto interfere with purification by distillation or the like, a choice ispreferably made of hydrocarbon groups having not more than 6 carbonatoms, especially alkyl and phenyl groups.

In the reaction solution where cohydrolysis is effected, the monomersare mixed in a certain ratio. First of all, the mixing ratio of themonomer of formula (2) to the entire silane monomers is determinedbecause a dissolution contrast between exposed and unexposed areas of aresist coating is almost dictated by this ratio. The ratio of themonomer (2) is preferably 5 to 80 mol %, more preferably 10 to 50 mol %,based on the entire silane monomers although it varies somewhat with themolecular weight of the protecting group or the like.

Next, the total amount of polar groups, that is, the total amount of themonomers of formulae (1) and (3) is preferably 20 to 95 mol %, morepreferably 50 to 90 mol %, based on the entire silane monomers. If theseunits are in short, the resist pattern can collapse by peeling andswelling during development. If these units are in excess, the resistcoating may have a lower contrast and lower resolution.

With respect to the ratio of the monomer of formula (1) to the monomerof formula (3), if one monomer is less than 10 mol % based on the totalof these two monomers, the function of the one monomer is not available.It is thus preferred that each monomer be 10 to 90 mol % based on thetotal of monomers of formulae (1) and (3).

During the cohydrolysis, at least one hydrolyzable silane monomer havingat least two hydrolyzable substituent groups other than the monomers offormulae (1) to (3) may be added as long as the amount thereof is up to30 mol % based on the entire monomers.

The other hydrolyzable silane monomers which can be added include silanemonomers having the general formula (7):

SiX₄  (7)

wherein X is as defined above, and silane monomers of the followingformulae:

R⁴SiX₃ and

R⁴ ₂SiX₂

wherein R⁴ and X are as defined above.

Where all silane monomers have bulky side chains, for example, only alower molecular weight product can be obtained by mere adjustment ofcondensation conditions. In such a situation, the molecular weight canbe increased by adding a monomer in which the organic group(s) bonded toa silicon atom, other than the hydrolyzable groups, is solely an alkylgroup of up to 4 carbon atoms, such as methyltriethoxysilane andtetraethoxysilane. As is known in the art, when it is desired to enhancethe transparency of a resin to exposure light of a shorter wavelength,for example, light of 157 nm, the desired effect is achieved byincreasing the number of fluorine atoms per unit weight of the resin. Tofurther impart such transparency to the resist composition of theinvention, the addition of a halosilane or alkoxysilane having afluoroalkyl group incorporated therein is effective.

The cohydrolytic condensate can be produced according to the ordinaryway of cohydrolytic condensation. Specifically, a mixture ofhydrolyzable silane compounds is contacted with a sufficient amount ofwater to induce cohydrolytic condensation whereupon cohydrolyticcondensation is effected to synthesize the desired product. The reactionmay be effected in the presence of an acid catalyst or base catalyst andalso in an organic solvent. Examples of suitable acid catalysts used inthe reaction include hydrochloric acid, nitric acid, acetic acid, oxalicacid, sulfuric acid, methanesulfonic acid, p-toluenesulfonic acid,trifluoroacetic acid, trifluoromethanesulfonic acid, perchloric acid,phosphoric acid and citric acid. Examples of suitable base catalystsinclude ammonia, methylamine, dimethylamine, ethylamine, diethylamine,triethylamine, sodium hydroxide, potassium hydroxide,tetramethylammonium hydroxide, tetrapropylammonium hydroxide, choline,diethylhydroxylamine, 1,8-diazabicyclo[5.4.0]-7-undecene (DBU), and1,5-diazabicyclo[4.3.0]-5-nonene (DBN). Suitable organic solventsinclude polar solvents such as ethanol, isopropyl alcohol (IPA), methylisobutyl ketone (MIBK), acetonitrile, dimethylacetamide (DMA), anddimethylformamide (DMF), and aromatic solvents such as benzene, toluene,and xylene, which may be used alone or in admixture.

Although the amounts of water and organic solvent are not particularlylimited, the amount of water used is preferably 150 to 5,000 mol % basedon the silane reactants, and the amount of organic solvent used ispreferably 50 to 1,000% by weight based on the silane reactants. Anappropriate amount of the catalyst used is 0.01 to 30 mol % based on thesilane reactants. Cohydrolytic condensation may be effected at atemperature of 0 to 60° C. and the reaction time is generally about 30minutes to about 120 hours.

The silicone resin produced as the cohydrolytic condensate shouldpreferably have a weight average molecular weight (Mw) of 1,000 to100,000, more preferably 1,000 to 30,000, and even more preferably 1,500to 20,000, as measured by gel permeation chromatography (GPC) versuspolystyrene standards. Resins having a Mw in excess of 100,000 may bedifficult to purify, resins having a Mw in excess of 30,000 tend todecline in resolution, though depending on a combination of monomers,and resins having a Mw in excess of 20,000 may have similar tendency.Resins having a Mw of less than 1,500 tend to have a rounded patternprofile, and resins having a Mw of less than 1,000 may have moretendency. During subsequent etching of the underlying film, such arounded pattern profile can cause to prevent perpendicular etching ofthe film.

Component (B) in the resist composition of the invention is an acidgenerator, typically photoacid generator. When a resist coating isformed from a resist composition and exposed to a pattern of light, thephotoacid generator in the resist composition functions to generate anacid upon receipt of the energy of light. In a resist coating made ofthe inventive resist composition, the acid thus generated serves as acatalyst to act on the acid-decomposable protecting group of theprotected carboxyl group as the silicone resin side chain, scissoringoff the protecting group and rendering the carboxyl group free and thusturning the silicone resin to be dissolvable in an aqueous alkalinedeveloper. With respect to the photoacid generator, a number oftechnical reports have already been made in conjunction withnon-silicone resist compositions. For example, JP-A 2004-149754describes numerous exemplary photoacid generators. Basically, all suchknown photoacid generators are applicable to the present invention.Preferred photoacid generators are sulfonium salts, iodonium salts,sulfonyldiazomethanes, N-sulfonyloxyimides, and N-sulfonyloxyoximes.Such photoacid generators may be used as a mixture of generators of thesame family or generators of different families. In such mixtures, thepredominant photoacid generator is often an onium salt, especially asulfonium salt. It is also effective to use another photoacid generatoras an auxiliary.

Sulfonium salts are salts of sulfonium cations with sulfonates.Exemplary sulfonium cations include substituted or unsubstitutedtriphenyl sulfoniums such as triphenylsulfonium,(4-tert-butoxyphenyl)diphenylsulfonium,bis(4-tert-butoxyphenyl)phenylsulfonium,tris(4-tert-butoxyphenyl)sulfonium,(3-tert-butoxyphenyl)diphenylsulfonium,bis(3-tert-butoxyphenyl)phenylsulfonium,tris(3-tert-butoxyphenyl)sulfonium,(3,4-di-tert-butoxyphenyl)diphenylsulfonium,bis(3,4-di-tert-butoxyphenyl)phenylsulfonium,tris(3,4-di-tert-butoxyphenyl)sulfonium,diphenyl(4-thiophenoxyphenyl)sulfonium,(4-tert-butoxycarbonylmethyloxyphenyl)diphenylsulfonium,tris(4-tert-butoxycarbonylmethyloxyphenyl)sulfonium; substituted orunsubstituted allyl sulfoniums such as 2-naphthyldiphenylsulfonium,dimethyl-2-naphthylsulfonium; and sulfoniums having a non-aromaticsubstituent group, such as 4-hydroxyphenyldimethylsulfonium,4-methoxyphenyldimethylsulfonium, trimethylsulfonium,2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium,tribenzylsulfonium, diphenylmethylsulfonium, dimethylphenylsulfonium,and 2-oxo-2-phenylethylthiacyclopentanium.

Exemplary sulfonates include sulfonates in which carbon in proximity tothe sulfonyl group is substituted with fluorine, such astrifluoromethanesulfonate, nonafluorobutanesulfonate,heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate,perfluoro-4-ethylcyclohexanesulfonate, and pentafluorobenzenesulfonate;aromatic sulfonates such as 4-trifluoromethylbenzenesulfonate,4-fluorobenzenesulfonate, mesitylenesulfonate,2,4,6-triisopropylbenzenesulfonate, toluenesulfonate, benzenesulfonate,4-(4′-toluenesulfonyloxy)benzenesulfonate, and naphthalenesulfonate; andalkylsulfonates such as camphorsulfonate, octanesulfonate,dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.Sulfonium salts based on combination of the foregoing examples areincluded.

Iodinium salts are salts of iodonium cations with sulfonates. Exemplaryare combinations of aryliodonium cations such as diphenyliodinium,bis(4-tert-butylphenyl)iodonium, 4-tert-butoxyphenylphenyliodonium, and4-methoxyphenylphenyliodonium with the foregoing sulfonates.

Exemplary sulfonyldiazomethane compounds include alkyl-substitutedsulfonyldiazomethane compounds such asbis(1,1-dimethylethylsulfonyl)diazomethane andbis(cyclohexylsulfonyl)diazomethane; fluoroalkyl-substitutedsulfonyldiazomethane compounds such asbis(perfluoroisopropylsulfonyl)diazomethane; and allyl-substitutedsulfonyldiazomethane compounds such as bis(phenylsulfonyl)diazomethane,bis(4-methylphenylsulfonyl)diazomethane,bis(2,4-dimethylphenylsulfonyl)diazomethane,bis(2-naphthylsulfonyl)diazomethane, andtert-butoxycarbonyl-4-methylphenylsulfonyldiazomethane.

N-sulfonyloxyimide photoacid generators include combinations of imidestructures with sulfonates. Exemplary imide structures are succinimide,naphthalene dicarboxylic acid imide, phthalimide, cyclohexyldicarboxylicacid imide, 5-norbornene-2,3-dicarboxylic acid imide, and7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboxylic acid imide. Exemplarysulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate,heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate,pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate,4-fluorobenzenesulfonate, mesitylenesulfonate,2,4,6-triisopropylbenzenesulfonate, toluenesulfonate, benzenesulfonate,naphthalenesulfonate, camphorsulfonate, octanesulfonate,dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.

Sulfone photoacid generators include

-   bis(phenylsulfonyl)methane,-   bis(4-methylphenylsulfonyl)methane,-   bis(2-naphthylsulfonyl)methane,-   2,2-bis(phenylsulfonyl)propane,-   2,2-bis(4-methylphenylsulfonyl)propane,-   2,2-bis(2-naphthylsulfonyl)propane,-   2-methyl-2-(p-toluenesulfonyl)propiophenone,-   2-cyclohexylcarbonyl-2-(p-toluenesulfonyl)propane, and-   2,4-dimethyl-2-(p-toluenesulfonyl)pentan-3-one.

Photoacid generators in the form of glyoxime derivatives are asdescribed in Japanese Patent No. 2,906,999 and JP-A 9-301948. Examplesinclude

-   bis-O-(p-toluenesulfonyl)-α-dimethylglyoxime,-   bis-O-(p-toluenesulfonyl)-α-diphenylglyoxime,-   bis-O-(p-toluenesulfonyl)-α-dicyclohexylglyoxime,-   bis-O-(p-toluenesulfonyl)-2,3-pentanedioneglyoxime,-   bis-O-(n-butanesulfonyl)-α-dimethylglyoxime,-   bis-O-(n-butanesulfonyl)-α-diphenylglyoxime,-   bis-O-(n-butanesulfonyl)-α-dicyclohexylglyoxime,-   bis-O-(methanesulfonyl)-α-dimethylglyoxime,-   bis-O-(trifluoromethanesulfonyl)-α-dimethylglyoxime,-   bis-O-(2,2,2-trifluoroethanesulfonyl)-α-dimethylglyoxime,-   bis-O-(10-camphorsulfonyl)-α-dimethylglyoxime,-   bis-O-(benzenesulfonyl)-α-dimethylglyoxime,-   bis-O-(p-fluorobenzenesulfonyl)-α-dimethylglyoxime,-   bis-O-(p-trifluoromethylbenzenesulfonyl)-α-dimethylglyoxime,-   bis-O-(xylenesulfonyl)-α-dimethylglyoxime,-   bis-O-(trifluoromethanesulfonyl)-nioxime,-   bis-O-(2,2,2-trifluoroethanesulfonyl)-nioxime,-   bis-O-(10-camphorsulfonyl)-nioxime,-   bis-O-(benzenesulfonyl)-nioxime,-   bis-O-(p-fluorobenzenesulfonyl)-nioxime,-   bis-O-(p-trifluoromethylbenzenesulfonyl)-nioxime, and-   bis-O-(xylenesulfonyl)-nioxime.

Also included are the oxime sulfonates described in U.S. Pat. No.6,004,724, for example,

-   (5-(4-toluenesulfonyl)oxyimino-5H-thiophen-2-ylidene)phenylacetonitrile,-   (5-(10-camphorsulfonyl)oxyimino-5H-thiophen-2-ylidene)phenylacetonitrile,-   (5-n-octanesulfonyloxyimino-5H-thiophen-2-ylidene)phenylacetonitrile,-   (5-(4-toluenesulfonyl)oxyimino-5H-thiophen-2-ylidene)(2-methylphenyl)acetonitrile,-   (5-(10-camphorsulfonyl)oxyimino-5H-thiophen-2-ylidene)(2-methylphenyl)acetonitrile,-   (5-n-octanesulfonyloxyimino-5H-thiophen-2-ylidene)(2-methylphenyl)acetonitrile,    etc.

Also included are the oxime sulfonates described in U.S. Pat. No.6,261,738 and JP-A 2000-314956, for example,2,2,2-trifluoro-1-phenyl-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-phenyl-ethanone oxime-O-(10-camphorylsulfonate);2,2,2-trifluoro-1-phenyl-ethanone oxime-O-(4-methoxyphenylsulfonate);2,2,2-trifluoro-1-phenyl-ethanone oxime-O-(1-naphthylsulfonate);2,2,2-trifluoro-1-phenyl-ethanone oxime-O-(2-naphthylsulfonate);2,2,2-trifluoro-1-phenyl-ethanoneoxime-O-(2,4,6-trimethylphenylsulfonate);2,2,2-trifluoro-1-(4-methylphenyl)-ethanoneoxime-O-(10-camphorylsulfonate);2,2,2-trifluoro-1-(4-methylphenyl)-ethanone oxime-O-(methylsulfonate);2,2,2-trifluoro-1-(2-methylphenyl)-ethanoneoxime-O-(10-camphorylsulfonate);2,2,2-trifluoro-1-(2,4-dimethylphenyl)-ethanoneoxime-O-(10-camphorylsulfonate);2,2,2-trifluoro-1-(2,4-dimethylphenyl)-ethanoneoxime-O-(1-naphthylsulfonate);2,2,2-trifluoro-1-(2,4-dimethylphenyl)-ethanoneoxime-O-(2-naphthylsulfonate);2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(10-camphorylsulfonate);2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(1-naphthylsulfonate);2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(2-naphthylsulfonate);2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(4-methylthiophenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(3,4-dimethoxyphenyl)-ethanoneoxime-O-methylsulfonate; 2,2,3,3,4,4,4-heptafluoro-1-phenyl-butanoneoxime-O-(10-camphorylsulfonate); 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-methylsulfonate; 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-10-camphorylsulfonate; 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-(4-methoxyphenyl)sulfonate; 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-(1-naphthyl)-sulfonate; 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-(2-naphthyl)sulfonate; 2,2,2-trifluoro-1-(phenyl)-ethanoneoxime-O-(2,4,6-trimethylphenyl)sulfonate;2,2,2-trifluoro-1-(4-methylphenyl)-ethanoneoxime-O-(10-camphoryl)sulfonate;2,2,2-trifluoro-1-(4-methylphenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(2-methylphenyl)-ethanoneoxime-O-(10-camphoryl)sulfonate;2,2,2-trifluoro-1-(2,4-dimethylphenyl)-ethanoneoxime-O-(1-naphthyl)sulfonate;2,2,2-trifluoro-1-(2,4-dimethylphenyl)-ethanoneoxime-O-(2-naphthyl)sulfonate;2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(10-camphoryl)sulfonate;2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(1-naphthyl)sulfonate;2,2,2-trifluoro-1-(2,4,6-trimethylphenyl)-ethanoneoxime-O-(2-naphthyl)sulfonate;2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(4-thiomethylphenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(3,4-dimethoxyphenyl)-ethanoneoxime-O-methylsulfonate; 2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanoneoxime-O-(4-methylphenyl)sulfonate;2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanoneoxime-O-(4-methoxyphenyl)sulfonate;2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanoneoxime-O-(4-dodecylphenyl)-sulfonate;2,2,2-trifluoro-1-(4-methoxyphenyl)-ethanone oxime-O-octylsulfonate;2,2,2-trifluoro-1-(4-thiomethyl-phenyl)-ethanoneoxime-O-(4-methoxyphenyl)sulfonate;2,2,2-trifluoro-1-(4-thiomethylphenyl)-ethanoneoxime-O-(4-dodecylphenyl)sulfonate;2,2,2-trifluoro-1-(4-thiomethyl-phenyl)-ethanone oxime-O-octylsulfonate;2,2,2-trifluoro-1-(4-thiomethylphenyl)-ethanoneoxime-O-(2-naphthyl)sulfonate;2,2,2-trifluoro-1-(2-methylphenyl)-ethanone oxime-O-methylsulfonate;2,2,2-trifluoro-1-(4-methylphenyl)ethanone oxime-O-phenylsulfonate;2,2,2-trifluoro-1-(4-chlorophenyl)-ethanone oxime-O-phenylsulfonate;2,2,3,3,4,4,4-heptafluoro-1-(phenyl)-butanoneoxime-O-(10-camphoryl)sulfonate; 2,2,2-trifluoro-1-naphthyl-ethanoneoxime-O-methylsulfonate; 2,2,2-trifluoro-2-naphthyl-ethanoneoxime-O-methylsulfonate; 2,2,2-trifluoro-1-[4-benzylphenyl]-ethanoneoxime-O-methylsulfonate;2,2,2-trifluoro-1-[4-(phenyl-1,4-dioxa-but-1-yl)phenyl]-ethanoneoxime-O-methylsulfonate; 2,2,2-trifluoro-1-naphthyl-ethanoneoxime-O-propylsulfonate; 2,2,2-trifluoro-2-naphthyl-ethanoneoxime-O-propylsulfonate; 2,2,2-trifluoro-1-[4-benzylphenyl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[4-methylsulfonylphenyl]-ethanoneoxime-O-propylsulfonate;1,3-bis[1-(4-phenoxyphenyl)-2,2,2-trifluoroethanoneoxime-O-sulfonyl]phenyl;2,2,2-trifluoro-1-[4-methylsulfonyl-oxyphenyl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[4-methylcarbonyloxyphenyl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[6H,7H-5,8-dioxonaphth-2-yl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[4-methoxycarbonylmethoxyphenyl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[4-(methoxycarbonyl)-(4-amino-1-oxa-pent-1-yl)-phenyl]-ethanoneoxime-O-propylsulfonate;2,2,2-trifluoro-1-[3,5-dimethyl-4-ethoxyphenyl]-ethanoneoxime-O-propylsulfonate; 2,2,2-trifluoro-1-[4-benzyloxyphenyl]-ethanoneoxime-O-propylsulfonate; 2,2,2-trifluoro-1-[2-thiophenyl]-ethanoneoxime-O-propylsulfonate; and2,2,2-trifluoro-1-[1-dioxa-thiophen-2-yl)]-ethanoneoxime-O-propylsulfonate.

Also included are the oxime sulfonates described in JP-A 9-95479 andJP-A 9-230588 and the references cited therein, for example,

-   α-(p-toluenesulfonyloxyimino)-phenylacetonitrile,-   α-(p-chlorobenzenesulfonyloxyimino)-phenylacetonitrile,-   α-(4-nitrobenzenesulfonyloxyimino)-phenylacetonitrile,-   α-(4-nitro-2-trifluoromethylbenzenesulfonyloxyimino)-phenylacetonitrile,-   α-(benzenesulfonyloxyimino)-4-chlorophenylacetonitrile,-   α-(benzenesulfonyloxyimino)-2,4-dichlorophenylacetonitrile,-   α-(benzenesulfonyloxyimino)-2,6-dichlorophenylacetonitrile,-   α-(benzenesulfonyloxyimino)-4-methoxyphenylacetonitrile,-   α-(2-chlorobenzenesulfonyloxyimino)-4-methoxyphenylacetonitrile,-   α-(benzenesulfonyloxyimino)-2-thienylacetonitrile,-   α-(4-dodecylbenzenesulfonyloxyimino)-phenylacetonitrile,-   α-[(4-toluenesulfonyloxyimino)-4-methoxyphenyl]acetonitrile,-   α-[(dodecylbenzenesulfonyloxyimino)-4-methoxyphenyl]acetonitrile,-   α-(tosyloxyimino)-3-thienylacetonitrile,-   α-(methylsulfonyloxyimino)-1-cyclopentenylacetonitrile,-   α-(ethylsulfonyloxyimino)-1-cyclopentenylacetonitrile,-   α-(isopropylsulfonyloxyimino)-1-cyclopentenylacetonitrile,-   α-(n-butylsulfonyloxyimino)-1-cyclopentenylacetonitrile,-   α-(ethylsulfonyloxyimino)-1-cyclohexenylacetonitrile,-   α-(isopropylsulfonyloxyimino)-1-cyclohexenylacetonitrile, and-   α-(n-butylsulfonyloxyimino)-1-cyclohexenylacetonitrile.

Suitable bisoxime sulfonates include those described in JP-A 9-208554,for example,

-   bis(α-(4-toluenesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(benzenesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(methanesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(butanesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(10-camphorsulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(4-toluenesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(trifluoromethanesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(4-methoxybenzenesulfonyloxy)imino)-p-phenylenediacetonitrile,-   bis(α-(4-toluenesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(benzenesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(methanesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(butanesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(10-camphorsulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(4-toluenesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(trifluoromethanesulfonyloxy)imino)-m-phenylenediacetonitrile,-   bis(α-(4-methoxybenzenesulfonyloxy)imino)-m-phenylenediacetonitrile,    etc.

Of the photoacid generators, sulfonium salts are preferred. For thecation side, triphenylsulfonium, 4-methylphenyldiphenylsulfonium,4-tert-butoxyphenyldiphenylsulfonium,4-tert-butylphenyldiphenylsulfonium, tris(4-tert-butylphenyl)sulfonium,4-alkoxynaphthyltetrahydrothiophenium, phenacyldiphenylsulfonium, andphenacyltetrahydrothiophenium are useful cations having a highsensitivity and acceptable stability. For the anion side, sulfonic acidsin which carbon proximate to the sulfonyl group is fluorinated, such asperfluorobutanesulfonate, perfluorooctanesulfonate andperfluoro-4-ethylcyclohexanesulfonate are preferred because they providea higher resolution.

In the resist composition of the invention, the photoacid generator maybe added in any desired amount, typically from 0.3 to 10 parts,preferably from 0.5 to 5 parts by weight, per 100 parts by weight of thesilicone resin (A). Excessive amounts of the photoacid generator maydegrade resolution and give rise to a problem of foreign matter duringdevelopment and resist peeling. The photoacid generators may be usedalone or in admixture. It is also possible to use a photoacid generatorhaving a low transmittance at the exposure wavelength in a controlledamount so as to adjust the transmittance of a resist coating.

Component (C) in the resist composition is an organicnitrogen-containing compound. In the resist composition, one or moreorganic nitrogen-containing compounds may be compounded. The organicnitrogen-containing compound is compounded for the purpose ofsuppressing the rate of diffusion when the acid generated by the acidgenerator diffuses within the resist film. It holds down the rate ofacid diffusion within the resist film, resulting in better resolution.In addition, it suppresses changes in sensitivity following exposure andreduces substrate and environment dependence, as well as improving theexposure latitude and the pattern profile.

Examples of organic nitrogen-containing compounds or basic compoundsinclude primary, secondary, and tertiary aliphatic amines, mixed amines,aromatic amines, heterocyclic amines, nitrogen-containing compoundshaving carboxyl group, nitrogen-containing compounds having sulfonylgroup, nitrogen-containing compounds having hydroxyl group,nitrogen-containing compounds having hydroxyphenyl group, alcoholicnitrogen-containing compounds, amide derivatives, and imide derivatives.

Examples of suitable primary aliphatic amines include ammonia,methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine,isobutylamine, sec-butylamine, tert-butylamine, pentylamine,tert-amylamine, cyclopentylamine, hexylamine, cyclohexylamine,heptylamine, octylamine, nonylamine, decylamine, dodecylamine,cetylamine, methylenediamine, ethylenediamine, andtetraethylenepentamine. Examples of suitable secondary aliphatic aminesinclude dimethylamine, diethylamine, di-n-propylamine, diisopropylamine,di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine,dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine,dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine,N,N-dimethylmethylenediamine, N,N-dimethylethylenediamine, andN,N-dimethyltetraethylenepentamine. Examples of suitable tertiaryaliphatic amines include trimethylamine, triethylamine,tri-n-propylamine, triisopropylamine, tri-n-butylamine,triisobutylamine, tri-sec-butylamine, tripentylamine,tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine,trioctylamine, trinonylamine, tridecylamine, tridodecylamine,tricetylamine, N,N,N′,N′-tetramethylmethylenediamine,N,N,N′,N′-tetramethylethylenediamine, andN,N,N′,N′-tetramethyltetraethylenepentamine.

Examples of suitable mixed amines include dimethylethylamine,methylethylpropylamine, benzylamine, phenethylamine, andbenzyldimethylamine. Examples of suitable aromatic and heterocyclicamines include aniline derivatives (e.g., aniline, N-methylaniline,N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline,3-methylaniline, 4-methylaniline, ethylaniline, propylaniline,trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline,2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, andN,N-dimethyltoluidine), diphenyl(p-tolyl)amine, methyldiphenylamine,triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene,pyrrole derivatives (e.g., pyrrole, 2H-pyrrole, 1-methylpyrrole,2,4-dimethylpyrrole, 2,5-dimethylpyrrole, and N-methylpyrrole), oxazolederivatives (e.g., oxazole and isooxazole), thiazole derivatives (e.g.,thiazole and isothiazole), imidazole derivatives (e.g., imidazole,4-methylimidazole, and 4-methyl-2-phenylimidazole), pyrazolederivatives, furazan derivatives, pyrroline derivatives (e.g., pyrrolineand 2-methyl-1-pyrroline), pyrrolidine derivatives (e.g., pyrrolidine,N-methylpyrrolidine, pyrrolidinone, and N-methylpyrrolidone),imidazoline derivatives, imidazolidine derivatives, pyridine derivatives(e.g., pyridine, methylpyridine, ethylpyridine, propylpyridine,butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine,trimethylpyridine, triethylpyridine, phenylpyridine,3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine,benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine,4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine,2-(1-ethylpropyl)pyridine, aminopyridine, and dimethylaminopyridine),pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives,pyrazoline derivatives, pyrazolidine derivatives, piperidinederivatives, piperazine derivatives, morpholine derivatives, indolederivatives, isoindole derivatives, 1H-indazole derivatives, indolinederivatives, quinoline derivatives (e.g., quinoline and3-quinolinecarbonitrile), isoquinoline derivatives, cinnolinederivatives, quinazoline derivatives, quinoxaline derivatives,phthalazine derivatives, purine derivatives, pteridine derivatives,carbazole derivatives, phenanthridine derivatives, acridine derivatives,phenazine derivatives, 1,10-phenanthroline derivatives, adeninederivatives, adenosine derivatives, guanine derivatives, guanosinederivatives, uracil derivatives, and uridine derivatives.

Examples of suitable nitrogen-containing compounds having carboxyl groupinclude aminobenzoic acid, indolecarboxylic acid, and amino acidderivatives (e.g. nicotinic acid, alanine, alginine, aspartic acid,glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine,methionine, phenylalanine, threonine, lysine,3-aminopyrazine-2-carboxylic acid, and methoxyalanine). Examples ofsuitable nitrogen-containing compounds having sulfonyl group include3-pyridinesulfonic acid and pyridinium p-toluenesulfonate. Examples ofsuitable nitrogen-containing compounds having hydroxyl group,nitrogen-containing compounds having hydroxyphenyl group, and alcoholicnitrogen-containing compounds include 2-hydroxypyridine, aminocresol,2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine,diethanolamine, triethanolamine, N-ethyldiethanolamine,N,N-diethylethanolamine, triisopropanolamine, 2,2′-iminodiethanol,2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol,4-(2-hydroxyethyl)morpholine, 2-(2-hydroxyethyl)pyridine,1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine,piperidine ethanol, 1-(2-hydroxyethyl)pyrrolidine,1-(2-hydroxyethyl)-2-pyrrolidinone, 3-piperidino-1,2-propanediol,3-pyrrolidino-1,2-propanediol, 8-hydroxyjulolidine, 3-quinuclidinol,3-tropanol, 1-methyl-2-pyrrolidine ethanol, 1-aziridine ethanol,N-(2-hydroxyethyl)phthalimide, and N-(2-hydroxyethyl)isonicotinamide.Examples of suitable amide derivatives include formamide,N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide,N,N-dimethylacetamide, propionamide, and benzamide. Suitable imidederivatives include phthalimide, succinimide, and maleimide.

In addition, basic compounds of the following general formula (C)-1 mayalso be included alone or in admixture.

In the formula, n is equal to 1, 2 or 3; side chain G1 is independentlyselected from groups of the following general formulae (L)-1 to (L)-3;side chain G2 is independently hydrogen or a straight, branched orcyclic C₁-C₂₀ alkyl group which may contain an ether or hydroxyl group.When n is 2 or 3, G1's may be the same or different. In this case, twoor three G1's may bond together to form a ring. More specifically,terminal groups on two or three structures of one or more of formulae(L)-1 to (L)-3 (e.g., R¹⁵ radicals, R¹⁸ radicals, R²⁰ radicals, or R¹⁵and R¹⁸ radicals, R¹⁵ and R²⁰ radicals, R¹⁸ and R²⁰ radicals) may bondtogether to form a ring.

In the formulae, R¹⁴, R¹⁶ and R¹⁹ are independently straight or branchedC₁-C₄ alkylene groups; R¹⁵ and R¹⁸ are independently hydrogen orstraight, branched or cyclic C₁-C₂₀ alkyl groups, which may contain atleast one hydroxyl, ether, ester group or lactone ring; R¹⁷ is a singlebond or a straight or branched C₁-C₄ alkylene group; and R²⁰ is hydrogenor a straight, branched or cyclic C₁-C₂₀ alkyl group, which may containat least one hydroxyl, ether, ester group or lactone ring.

Illustrative examples of the compounds of formula (C)-1 includetris(2-methoxymethoxyethyl)amine, tris{2-(2-methoxyethoxy)ethyl}amine,tris{2-(2-methoxyethoxymethoxy)ethyl}amine,tris{2-(1-methoxyethoxy)ethyl}amine, tris{2-(1-ethoxyethoxy)ethyl}amine,tris{2-(1-ethoxypropoxy)ethyl}amine,tris[2-{2-(2-hydroxyethoxy)ethoxy}ethyl]amine,4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo[8.8.8]hexacosane,4,7,13,18-tetraoxa-1,10-diazabicyclo[8.5.5]eicosane,1,4,10,13-tetraoxa-7,16-diazabicyclooctadecane,1-aza-12-crown-4,1-aza-15-crown-5,1-aza-18-crown-6,tris(2-formyloxyethyl)amine, tris(2-acetoxyethyl)amine,tris(2-propionyloxyethyl)amine, tris(2-butyryloxyethyl)amine,tris(2-isobutyryloxyethyl)amine, tris(2-valeryloxyethyl)amine,tris(2-pivaloyloxyethyl)amine,N,N-bis(2-acetoxyethyl)-2-(acetoxyacetoxy)ethylamine,tris(2-methoxycarbonyloxyethyl)amine,tris(2-tert-butoxycarbonyloxyethyl)amine,tris[2-(2-oxopropoxy)ethyl]amine,tris[2-(methoxycarbonylmethyl)oxyethyl]amine,tris[2-(tert-butoxycarbonylmethyloxy)ethyl]amine,tris[2-(cyclohexyloxycarbonylmethyloxy)ethyl]amine,tris(2-methoxycarbonylethyl)amine, tris(2-ethoxycarbonylethyl)amine,N,N-bis(2-hydroxyethyl)-2-(methoxycarbonyl)ethylamine,N,N-bis(2-acetoxyethyl)-2-(methoxycarbonyl)ethylamine,N,N-bis(2-hydroxyethyl)-2-(ethoxycarbonyl)ethylamine,N,N-bis(2-acetoxyethyl)-2-(ethoxycarbonyl)ethylamine,N,N-bis(2-hydroxyethyl)-2-(2-methoxyethoxycarbonyl)ethylamine,N,N-bis(2-acetoxyethyl)-2-(2-methoxyethoxycarbonyl)ethylamine,N,N-bis(2-hydroxyethyl)-2-(2-hydroxyethoxycarbonyl)ethylamine,N,N-bis(2-acetoxyethyl)-2-(2-acetoxyethoxycarbonyl)ethylamine,N,N-bis(2-hydroxyethyl)-2-[(methoxycarbonyl)methoxycarbonyl]-ethylamine,N,N-bis(2-acetoxyethyl)-2-[(methoxycarbonyl)methoxycarbonyl]-ethylamine,N,N-bis(2-hydroxyethyl)-2-(2-oxopropoxycarbonyl)ethylamine,N,N-bis(2-acetoxyethyl)-2-(2-oxopropoxycarbonyl)ethylamine,N,N-bis(2-hydroxyethyl)-2-(tetrahydrofurfuryloxycarbonyl)-ethylamine,N,N-bis(2-acetoxyethyl)-2-(tetrahydrofurfuryloxycarbonyl)-ethylamine,N,N-bis(2-hydroxyethyl)-2-[(2-oxotetrahydrofuran-3-yl)oxy-carbonyl]ethylamine,N,N-bis(2-acetoxyethyl)-2-[(2-oxotetrahydrofuran-3-yl)oxy-carbonyl]ethylamine,N,N-bis(2-hydroxyethyl)-2-(4-hydroxybutoxycarbonyl)ethylamine,N,N-bis(2-formyloxyethyl)-2-(4-formyloxybutoxycarbonyl)-ethylamine,N,N-bis(2-formyloxyethyl)-2-(2-formyloxyethoxycarbonyl)-ethylamine,N,N-bis(2-methoxyethyl)-2-(methoxycarbonyl)ethylamine,N-(2-hydroxyethyl)-bis[2-(methoxycarbonyl)ethyl]amine,N-(2-acetoxyethyl)-bis[2-(methoxycarbonyl)ethyl]amine,N-(2-hydroxyethyl)-bis[2-(ethoxycarbonyl)ethyl]amine,N-(2-acetoxyethyl)-bis[2-(ethoxycarbonyl)ethyl]amine,N-(3-hydroxy-1-propyl)-bis[2-(methoxycarbonyl)ethyl]amine,N-(3-acetoxy-1-propyl)-bis[2-(methoxycarbonyl)ethyl]amine,N-(2-methoxyethyl)-bis[2-(methoxycarbonyl)ethyl]amine,N-butyl-bis[2-(methoxycarbonyl)ethyl]amine,N-butyl-bis[2-(2-methoxyethoxycarbonyl)ethyl]amine,N-methyl-bis(2-acetoxyethyl)amine, N-ethyl-bis(2-acetoxyethyl)amine,N-methyl-bis(2-pivaloyloxyethyl)amine,N-ethyl-bis[2-(methoxycarbonyloxy)ethyl]amine,N-ethyl-bis[2-(tert-butoxycarbonyloxy)ethyl]amine,tris(methoxycarbonylmethyl)amine, tris(ethoxycarbonylmethyl)amine,N-butyl-bis(methoxycarbonylmethyl)amine,N-hexyl-bis(methoxycarbonylmethyl)amine, andβ-(diethylamino)-δ-valerolactone.

Also useful are one or more basic compounds having cyclic structurerepresented by the following general formula (C)-2.

Herein L is selected from the three structures having formulae (L)-1 to(L)-3, and R²¹ is a straight or branched C₂-C₂₀ alkylene group which maycontain one or more carbonyl, ether, ester or sulfide groups.

Illustrative examples of the basic compounds having formula (C)-2include 1-[2-(methoxymethoxy)ethyl]pyrrolidine,1-[2-(methoxymethoxy)ethyl]piperidine,4-[2-(methoxymethoxy)ethyl]morpholine,1-[2-[(2-methoxyethoxy)methoxy]ethyl]pyrrolidine,1-[2-[(2-methoxyethoxy)methoxy]ethyl]piperidine,4-[2-[(2-methoxyethoxy)methoxy]ethyl]morpholine, 2-(1-pyrrolidinyl)ethylacetate, 2-piperidinoethyl acetate, 2-morpholinoethyl acetate,2-(1-pyrrolidinyl)ethyl formate, 2-piperidinoethyl propionate,2-morpholinoethyl acetoxyacetate, 2-(1-pyrrolidinyl)ethylmethoxyacetate, 4-[2-(methoxycarbonyloxy)ethyl]morpholine,1-[2-(t-butoxycarbonyloxy)ethyl]piperidine,4-[2-(2-methoxyethoxycarbonyloxy)ethyl]morpholine, methyl3-(1-pyrrolidinyl)propionate, methyl 3-piperidinopropionate, methyl3-morpholinopropionate, methyl 3-(thiomorpholino)propionate, methyl2-methyl-3-(1-pyrrolidinyl)propionate, ethyl 3-morpholinopropionate,methoxycarbonylmethyl 3-piperidinopropionate, 2-hydroxyethyl3-(1-pyrrolidinyl)propionate, 2-acetoxyethyl 3-morpholinopropionate,2-oxotetrahydrofuran-3-yl 3-(1-pyrrolidinyl)propionate,tetrahydrofurfuryl 3-morpholinopropionate, glycidyl3-piperidinopropionate, 2-methoxyethyl 3-morpholinopropionate,2-(2-methoxyethoxy)ethyl 3-(1-pyrrolidinyl)propionate, butyl3-morpholinopropionate, cyclohexyl 3-piperidinopropionate,α-(1-pyrrolidinyl)methyl-γ-butyrolactone, β-piperidino-γ-butyrolactone,β-morpholino-δ-valerolactone, methyl 1-pyrrolidinylacetate, methylpiperidinoacetate, methyl morpholinoacetate, methylthiomorpholinoacetate, ethyl 1-pyrrolidinylacetate, and 2-methoxyethylmorpholinoacetate.

Also, one or more basic compounds having cyano group represented by thefollowing general formulae (C)-3 to (C)-6 may be blended.

Herein, L, R²¹ and n are as defined above, and R²² and R²³ are eachindependently a straight or branched C₁-C₄ alkylene group.

Illustrative examples of the basic compounds having cyano represented byformulae (C)-3 to (C)-6 include 3-(diethylamino)propiononitrile,N,N-bis(2-hydroxyethyl)-3-aminopropiononitrile,N,N-bis(2-acetoxyethyl)-3-aminopropiononitrile,N,N-bis(2-formyloxyethyl)-3-aminopropiononitrile,N,N-bis(2-methoxyethyl)-3-aminopropiononitrile,N,N-bis[2-(methoxymethoxy)ethyl]-3-aminopropiononitrile, methylN-(2-cyanoethyl)-N-(2-methoxyethyl)-3-aminopropionate, methylN-(2-cyanoethyl)-N-(2-hydroxyethyl)-3-aminopropionate, methylN-(2-acetoxyethyl)-N-(2-cyanoethyl)-3-aminopropionate,N-(2-cyanoethyl)-N-ethyl-3-aminopropiononitrile,N-(2-cyanoethyl)-N-(2-hydroxyethyl)-3-aminopropiononitrile,N-(2-acetoxyethyl)-N-(2-cyanoethyl)-3-aminopropiononitrile,N-(2-cyanoethyl)-N-(2-formyloxyethyl)-3-aminopropiononittile,N-(2-cyanoethyl)-N-(2-methoxyethyl)-3-aminopropiononitrile,N-(2-cyanoethyl)-N-[2-(methoxymethoxy)ethyl]-3-aminopropiononitrile,N-(2-cyanoethyl)-N-(3-hydroxy-1-propyl)-3-aminopropiononitrile,N-(3-acetoxy-1-propyl)-N-(2-cyanoethyl)-3-aminopropiononitrile,N-(2-cyanoethyl)-N-(3-formyloxy-1-propyl)-3-aminopropiononitrile,N-(2-cyanoethyl)-N-tetrahydrofurfuryl-3-aminopropiononitrile,N,N-bis(2-cyanoethyl)-3-aminopropiononitrile, diethylaminoacetonitrile,N,N-bis(2-hydroxyethyl)aminoacetonitrile,N,N-bis(2-acetoxyethyl)aminoacetonitrile,N,N-bis(2-formyloxyethyl)aminoacetonitrile,N,N-bis(2-methoxyethyl)aminoacetonitrile,N,N-bis[2-(methoxymethoxy)ethyl]aminoacetonitrile, methylN-cyanomethyl-N-(2-methoxyethyl)-3-aminopropionate, methylN-cyanomethyl-N-(2-hydroxyethyl)-3-aminopropionate, methylN-(2-acetoxyethyl)-N-cyanomethyl-3-aminopropionate,N-cyanomethyl-N-(2-hydroxyethyl)aminoacetonitrile,N-(2-acetoxyethyl)-N-(cyanomethyl)aminoacetonitrile,N-cyanomethyl-N-(2-formyloxyethyl)aminoacetonitrile,N-cyanomethyl-N-(2-methoxyethyl)aminoacetonitrile,N-cyanomethyl-N-[2-(methoxymethoxy)ethyl)aminoacetonitrile,N-cyanomethyl-N-(3-hydroxy-1-propyl)aminoacetonitrile,N-(3-acetoxy-1-propyl)-N-(cyanomethyl)aminoacetonitrile,N-cyanomethyl-N-(3-formyloxy-1-propyl)aminoacetonitrile,N,N-bis(cyanomethyl)aminoacetonitrile, 1-pyrrolidinepropiononitrile,1-piperidinepropiononitrile, 4-morpholinepropiononitrile,1-pyrrolidineacetonitrile, 1-piperidineacetonitrile,4-morpholineacetonitrile, cyanomethyl 3-diethylaminopropionate,cyanomethyl N,N-bis(2-hydroxyethyl)-3-aminopropionate, cyanomethylN,N-bis(2-acetoxyethyl)-3-aminopropionate, cyanomethylN,N-bis(2-formyloxyethyl)-3-aminopropionate, cyanomethylN,N-bis(2-methoxyethyl)-3-aminopropionate, cyanomethylN,N-bis[2-(methoxymethoxy)ethyl]-3-aminopropionate, 2-cyanoethyl3-diethylaminopropionate, 2-cyanoethylN,N-bis(2-hydroxyethyl)-3-aminopropionate, 2-cyanoethylN,N-bis(2-acetoxyethyl)-3-aminopropionate, 2-cyanoethylN,N-bis(2-formyloxyethyl)-3-aminopropionate, 2-cyanoethylN,N-bis(2-methoxyethyl)-3-aminopropionate, 2-cyanoethylN,N-bis[2-(methoxymethoxy)ethyl]-3-aminopropionate, cyanomethyl1-pyrrolidinepropionate, cyanomethyl 1-piperidinepropionate, cyanomethyl4-morpholinepropionate, 2-cyanoethyl 1-pyrrolidinepropionate,2-cyanoethyl 1-piperidinepropionate, and 2-cyanoethyl4-morpholinepropionate.

Also included are organic nitrogen-containing compounds having animidazole skeleton and a polar functional group, represented by thegeneral formula (C)-7.

Herein, R²⁴ is a straight, branched or cyclic C₂-C₂₀ alkyl group bearingat least one polar functional group selected from among hydroxyl,carbonyl, ester, ether, sulfide, carbonate, cyano and acetal groups;R²⁵, R²⁶ and R²⁷ are each independently a hydrogen atom, a straight,branched or cyclic alkyl, aryl or aralkyl group having 1 to 10 carbonatoms.

Also included are organic nitrogen-containing compounds having abenzimidazole skeleton and a polar functional group, represented by thegeneral formula (C)-8.

Herein, R²⁸ is a hydrogen atom, a straight, branched or cyclic alkyl,aryl or aralkyl group having 1 to 10 carbon atoms. R²⁹ is a polarfunctional group-bearing, straight, branched or cyclic C₁-C₂₀ alkylgroup, and the alkyl group contains as the polar functional group atleast one group selected from among ester, acetal and cyano groups, andmay additionally contain at least one group selected from amonghydroxyl, carbonyl, ether, sulfide and carbonate groups.

Further included are heterocyclic nitrogen-containing compounds having apolar functional group, represented by the general formulae (C)-9 and(C)-10.

Herein, A is a nitrogen atom or C—R³⁶, B is a nitrogen atom or C—R³⁷,R³⁰ is a straight, branched or cyclic C₂-C₂₀ alkyl group bearing atleast one polar functional group selected from among hydroxyl, carbonyl,ester, ether, sulfide, carbonate, cyano and acetal groups; R³¹, R³², R³³and R³⁴ are each independently a hydrogen atom, a straight, branched orcyclic alkyl group or aryl group having 1 to 10 carbon atoms, or a pairof R³¹ and R³² and a pair of R³³ and R³⁴, taken together, may form abenzene, naphthalene or pyridine ring; R³⁵ is a hydrogen atom, astraight, branched or cyclic alkyl group or aryl group having 1 to 10carbon atoms; R³⁶ and R³⁷ each are a hydrogen atom, a straight, branchedor cyclic alkyl group or aryl group having 1 to 10 carbon atoms, or apair of R³⁵ and R³, taken together, may form a benzene or naphthalenering.

The organic nitrogen-containing compound or basic compound (C) ispreferably formulated in an amount of 0.001 to 2 parts, and especially0.01 to 1 part by weight, per 100 parts by weight of the base resin (A).Less than 0.001 part of the nitrogen-containing compound achieves no orlittle addition effect whereas more than 2 parts would result in too lowa sensitivity.

Component (D) in the resist composition of the invention is an organicsolvent. The organic solvent used herein may be any organic solvent inwhich the base resin or solids, photoacid generator, and othercomponents are soluble.

Illustrative, non-limiting, examples of the organic solvent includeketones such as cyclohexanone and methyl 2-n-amyl ketone; alcohols suchas 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol,and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethylether, ethylene glycol monomethyl ether, propylene glycol monoethylether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether,and diethylene glycol dimethyl ether; esters such as propylene glycolmonomethyl ether acetate (PGMEA), propylene glycol monoethyl etheracetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate,tert-butyl propionate, and propylene glycol mono-tert-butyl etheracetate; and lactones such as γ-butyrolactone. These solvents may beused alone or in combinations of two or more thereof. Of the aboveorganic solvents, it is recommended to use diethylene glycol dimethylether, 1-ethoxy-2-propanol, propylene glycol monomethyl ether acetate,or a mixture thereof because the photoacid generator is most solubletherein.

An appropriate amount of the organic solvent used is about 200 to 1,000parts, especially about 400 to 800 parts by weight per 100 parts byweight of the solids in the resist composition.

In the resist composition of the invention, there may be added acompound which is decomposed with an acid to generate another acid, thatis, acid-amplifier compound. For these compounds, reference should bemade to J. Photopolym. Sci. and Tech., 8, 43-44, 45-46 (1995), andibid., 9, 29-30 (1996).

Examples of the acid-amplifier compound include tert-butyl2-methyl-2-tosyloxymethylacetoacetate and 2-phenyl2-(2-tosyloxyethyl)-1,3-dioxolane, but are not limited thereto. Ofwell-known photoacid generators, many of those compounds having poorstability, especially poor thermal stability exhibit an acid-amplifiercompound-like behavior.

In the resist composition of the invention, an appropriate amount of theacid-amplifier compound is up to 2 parts, and especially up to 1 part byweight per 100 parts by weight of the base resin (A). Excessive amountsof the acid-amplifier compound makes diffusion control difficult,leading to degradation of resolution and pattern profile.

The resist composition of the invention may additionally include anacetylene alcohol derivative for the purpose of enhancing the shelfstability.

Preferable examples of the acetylene alcohol derivative include Surfynol61, Surfynol 82, Surfynol 104, Surfynol 104E, Surfynol 104H, Surfynol104A, Surfynol TG, Surfynol PC, Surfynol 440, Surfynol 465, and Surfynol485 from Air Products and Chemicals Inc., and Surfynol E1004 fromNisshin Chemical Industry K.K. They are polyalkylene oxide alcoholderivatives having an acetylene structure within the molecule.

The acetylene alcohol derivative is preferably added in an amount of0.01 to 2% by weight, and more preferably 0.02 to 1% by weight, based onthe resist composition. Less than 0.01% by weight would be ineffectivefor improving coating characteristics and shelf stability, whereas morethan 2% by weight would result in a resist having a low resolution.

The resist composition of the invention may include optionalingredients, for example, a surfactant which is commonly used forimproving the coating characteristics. Optional ingredients may be addedin conventional amounts so long as this does not compromise the objectsof the invention.

Nonionic surfactants are preferred, examples of which includeperfluoroalkylpolyoxyethylene ethanols, fluorinated alkyl esters,perfluoroalkylamine oxides, perfluoroalkyl EO-addition products, andfluorinated organosiloxane compounds. Useful surfactants arecommercially available under the trade names Fluorad FC-430 and FC-431from Sumitomo 3M, Ltd., Surflon S-141, S-145, KH-10, KH-20, KH-30 andKH-40 from Asahi Glass Co., Ltd., Unidyne DS-401, DS-403 and DS-451 fromDaikin Industry Co., Ltd., Megaface F-8151 from Dai-Nippon Ink &Chemicals, Inc., and X-70-092 and X-70-093 from Shin-Etsu Chemical Co.,Ltd. Preferred surfactants are Fluorad FC-430 from Sumitomo 3M, Ltd.,KH-20 and KH-30 from Asahi Glass Co., Ltd., and X-70-093 from Shin-EtsuChemical Co., Ltd.

Pattern formation using the resist composition of the invention may becarried out by a known lithographic technique. For example, the resistcomposition is applied onto a substrate such as a silicon wafer by spincoating or the like to form a resist film having a thickness of 0.1 to1.0 μm, which is then pre-baked on a hot plate at 60 to 200° C. for 10seconds to 10 minutes, and preferably at 80 to 150° C. for 30 seconds to5 minutes. A patterning mask having the desired pattern is then placedover the resist film, and the film exposed through the mask to anelectron beam or to high-energy radiation having a wavelength of up to300 nm such as deep-UV radiation, excimer laser radiation or x-ray in adose of about 1 to 200 mJ/cm², and preferably about 10 to 100 mJ/cm².The resist film is then post-exposure baked (PEB) on a hot plate at 60to 150° C. for 10 seconds to 5 minutes, and preferably at 80 to 130° C.for 30 seconds to 3 minutes. Finally, development is carried out usingas the developer an aqueous alkali solution, such as a 0.1 to 5 wt %(preferably 2 to 3 wt %) aqueous solution of tetramethylammoniumhydroxide (TMAH), this being done by a conventional method such as dip,puddle, or spray development for a period of 10 seconds to 3 minutes,and preferably 30 seconds to 2 minutes. These steps result in theformation of the desired pattern on the substrate. Of the various typesof high-energy radiation that may be used, the resist composition of theinvention is best suited to fine pattern formation with deep-UVradiation or excimer laser radiation having a wavelength of 254 to 120nm, specifically excimer lasers such as KrF (248 nm), ArF (193 nm), Kr₂(146 nm), and KrAr (134 nm), and lasers such as F₂ (157 nm) and Ar₂ (126nm), x-rays, or electron beams. The invention is applicable to not onlydry light exposure, but also light exposure by the immersion process.

Described below is a method of processing a substrate using the resistcomposition according to the bilayer resist process. A substrate to beprocessed is usually an inorganic substrate. An underlying film (ororganic film) is formed on the substrate. The resist composition of theinvention is applied onto the underlying film to form a resist coating.If necessary, an antireflective coating may be formed between the resistcomposition and the underlying film. The resist coating is patterned bythe above-mentioned procedure, after which the pattern is transferred tothe underlying film by oxygen gas etching using the resist pattern as anetching mask. The oxygen gas etching is reactive plasma etching usingoxygen gas as a main component. With this method, silicon oxide havinghigh resistance to oxygen gas etching is formed from the resist pattern,allowing the underlying organic film to be processed at a high aspectratio. SO₂, CO₂₁ CO, NH₃, or N₂ gas may be added to the oxygen gas forprotecting side walls for preventing the film from being configured to aT-top profile by over-etching. Prior to the oxygen gas etching, briefetching with a fluorocarbon gas may be carried out for removing any scumof the resist after development and smoothening line edges to prohibitroughening.

The processable film is formed on a substrate. The substrate used hereinis not particularly limited and is typically made of a materialdifferent from the processable film (also referred to as processablesubstrate), for example, Si, α-Si, p-Si, SiO₂, SiN, SiON, W, TiN, Al orthe like. The processable film used herein is selected from variouslow-k films and stop films thereof, including Si, SiO₂, SiON, SiN, p-Si,α-Si, W, W—Si, Al, Cu, Al—Si or the like. The processable film isgenerally formed to a thickness of 50 to 10,000 nm, especially 100 to5,000 nm.

Subsequently, the processable film is subjected to dry etching. Etchingwith a fluorocarbon gas as a main component is carried out when theprocessable film is SiO₂ or Si₃N₄. Exemplary fluorocarbon gases are CF₄,CHF₃, CH₂F₂, C₂F₆, C₃F₈, C₄F₁₀ and CF₁₂. At the same time as the dryetching of the processable film, the silicon-containing resist film canbe stripped off. Etching with chlorine or bromine gas as a maincomponent is employed when the processable film is polysilicon, tungstensilicide, TiN/Al or the like.

In the bilayer resist process, the underlying film may be made of anyorganic material which is selected from a number of well-known organicfilm materials. As the organic film, aromatic resins are generallypreferred, with those aromatic resins which can be crosslinked duringfilm formation so as to prevent intermixing during coating and filmformation of the resist composition thereon being especially preferred.

Suitable aromatic resins include novolac resins and polyhydroxystyreneresins. Aromatic resins further having a fluorene or indene structureare advantageously used to enhance the etching resistance of the organicfilm during etching of the substrate after the pattern has beentransferred to the organic film. It is possible to form anantireflective coating on the organic film and to form a resist film ofthe invention thereon. If the organic film possesses an antireflectivefunction, advantageously the overall process becomes simpler. To impartan antireflective function, an aromatic resin having an anthracenestructure or naphthalene structure or benzene structure having aconjugated unsaturated bond is preferably used.

Crosslinks can be formed by a crosslinking method as employed forthermosetting resins and negative resist compositions. In general, acomposition solution comprising a resin having functional groups such asphenol, alkoxyphenyl, alcohol or carboxylic acid, a material capable ofthermal decomposition to generate an acid, and a crosslinker capable offorming crosslinks with the functional groups in the presence of an acidcatalyst, such as hexaalkoxymethylmelamine is applied onto a processablesubstrate, and the coating is heated to generate an acid, with whichcrosslinks are formed.

EXAMPLE

Synthesis Examples and Examples are given below together withComparative Examples for further illustrating the invention although theinvention is not limited thereby. The abbreviations used herein are GPCfor gel permeation chromatography, NMR for nuclear magnetic resonance,and Mw for weight average molecular weight. Et stands for ethyl, and Mestands for methyl.

Monomers 1 to 13 used in Synthesis Examples have the structural formulaeshown below.

Synthesis Example 1

Synthesis of Polymer 1

A 200-ml four-necked flask equipped with a stirrer, reflux condenser,dropping funnel and thermometer was charged with 0.2 g of acetic acid,20 g of water, and 20 g of ethanol and kept at 30° C. To the flask, asolution of 10.8 g (30 mmol) Monomer 1, 7.6 g (20 mmol) Monomer 4 and16.4 g (50 mmol) Monomer 6 in 40 g ethanol was added dropwise over 3hours. Subsequently the reaction mixture was ripened at 30° C. for 20hours. The reaction mixture was repeatedly diluted with methyl isobutylketone and washed with water until the organic layer became neutral. Itwas concentrated, obtaining 26.9 g of an oligomer.

Using 50 g of toluene, the oligomer was transferred to a 100-mlthree-necked flask equipped with a stirrer, reflux condenser, andthermometer. Potassium hydroxide, 56 mg, was added to the solution,which was heated under reflux over 20 hours. After cooling, the reactionsolution was repeatedly diluted with methyl isobutyl ketone and washedwith water until the organic layer became neutral. It was concentrated,obtaining 23.3 g of a polymer (or silicone resin).

On analysis by NMR and GPC, the polymer, designated Polymer 1, was foundto consist of the units shown below and has a Mw of 3,300.

Synthesis Example 2

Synthesis of Polymers 2 to 20

Silicone resins, designated Polymers 2 to 20, were produced by the sameprocedure as Synthesis Example 1 using the combination of silanecompounds shown in Table 1. The yield and Mw of the polymers are alsoshown in Table 1.

TABLE 1 Polymer Monomers used, amount Yield Mw Polymer 1 Monomer 1Monomer 4 Monomer 6 23.3 g 3300 30 mmol 20 mmol 50 mmol Polymer 2Monomer 1 Monomer 5 Monomer 6 23.0 g 3400 30 mmol 20 mmol 50 mmolPolymer 3 Monomer 1 Monomer 4 Monomer 7 24.1 g 2350 30 mmol 30 mmol 40mmol Polymer 4 Monomer 1 Monomer 4 Monomer 6 Monomer 7 23.4 g 2600 30mmol 20 mmol 25 mmol 25 mmol Polymer 5 Monomer 2 Monomer 4 Monomer 624.0 g 3500 20 mmol 20 mmol 60 mmol Polymer 6 Monomer 3 Monomer 4Monomer 6 24.1 g 3450 25 mmol 20 mmol 55 mmol Polymer 7 Monomer 1Monomer 4 Monomer 8 21.8 g 3550 25 mmol 15 mmol 60 mmol Polymer 8Monomer 1 Monomer 4 Monomer 9 22.9 g 3400 30 mmol 20 mmol 50 mmolPolymer 9 Monomer 3 Monomer 4 Monomer 8 23.5 g 3200 25 mmol 20 mmol 55mmol Polymer 10 Monomer 3 Monomer 5 Monomer 9 23.1 g 3150 30 mmol 20mmol 50 mmol Polymer 11 Monomer 1 Monomer 4 Monomer 10 26.7 g 3000 20mmol 40 mmol 40 mmol Polymer 12 Monomer 3 Monomer 4 Monomer 10 27.7 g3650 40 mmol 10 mmol 50 mmol Polymer 13 Monomer 1 Monomer 4 Monomer 6Monomer 11 18.3 g 6500 20 mmol 10 mmol 40 mmol 30 mmol Polymer 14Monomer 3 Monomer 5 Monomer 9 Monomer 11 19.8 g 4200 30 mmol 30 mmol 30mmol 10 mmol Polymer 15 Monomer 1 Monomer 4 Monomer 8 Monomer 11 21.6 g3900 30 mmol 30 mmol 30 mmol 10 mmol Polymer 16 Monomer 1 Monomer 4Monomer 9 Monomer 12 17.9 g 6400 30 mmol 10 mmol 30 mmol 30 mmol Polymer17 Monomer 2 Monomer 5 Monomer 6 Monomer 12 23.2 g 3850 25 mmol 25 mmol40 mmol 10 mmol Polymer 18 Monomer 3 Monomer 4 Monomer 8 Monomer 12 19.8g 4200 20 mmol 15 mmol 45 mmol 20 mmol Polymer 19 Monomer 1 Monomer 427.0 g 2900 (Comparison) 20 mmol 80 mmol Polymer 20 Monomer 1 Monomer 4Monomer 13 21.9 g 3350 (Comparison) 30 mmol 20 mmol 50 mmol

Examples and Comparative Examples Resolution Evaluation

A positive resist-forming coating solution was prepared by dissolvingeach of the polymers (Polymers 1 to 20), a photoacid generator (PAG1:triphenylsulfonium nonafluoro-n-butanesulfonate) and a basic compound inpropylene glycol monomethyl ether acetate (PGMEA) according to therecipe shown in Table 2, followed by filtration through a filter havinga pore diameter of 0.2 μm. Using a spin coater, the resist solution wasapplied to a silicon wafer having a 55-nm antireflective coating ofDUV-30J (Nissan Chemical Industries, Ltd.) formed thereon, and baked at110° C. for 90 seconds to form a resist film of 200 nm thick. The resistfilm was exposed using an ArF excimer laser stepper NSR—S305B (NikonCorporation; NA 0.68, σ 0.85), then baked (PEB) at 90° C. for 90seconds, and developed for 60 seconds with a 2.38 wt % aqueous solutionof tetramethylammonium hydroxide (TMAH), thereby giving a positivepattern.

The resulting resist patterns were evaluated as follows. The optimumexposure (sensitivity, mJ/cm²) was defined as the exposure dose whichprovided a 1:1 resolution at the top and bottom of a 0.18-μmline-and-space pattern. The maximum resolution of the resist was definedas the minimum line width of the lines and spaces that separated at theoptimum exposure.

The formulation of resist compositions and their maximum resolution areshown in Table 2.

TABLE 2 Photoacid Polymer generator Basic compound Solvent SensitivityResolution (pbw) (pbw) (pbw) (pbw) (mJ/cm²) (nm) Example Polymer 1 PAG1tributylamine PGMEA 39 105 (100) (2) (0.1) (900) Polymer 2 PAG1tributylamine PGMEA 39 105 (100) (2) (0.1) (900) Polymer 3 PAG1tributylamine PGMEA 41 105 (100) (2) (0.1) (900) Polymer 4 PAG1tributylamine PGMEA 40 105 (100) (2) (0.1) (900) Polymer 5 PAG1tributylamine PGMEA 37 100 (100) (2) (0.1) (900) Polymer 6 PAG1tributylamine PGMEA 32 95 (100) (2) (0.1) (900) Polymer 7 PAG1tributylamine PGMEA 42 105 (100) (2) (0.1) (900) Polymer 8 PAG1tributylamine PGMEA 39 105 (100) (2) (0.1) (900) Polymer 9 PAG1tributylamine PGMEA 30 95 (100) (2) (0.1) (900) Polymer 10 PAG1tributylamine PGMEA 30 95 (100) (2) (0.1) (900) Polymer 11 PAG1tributylamine PGMEA 42 110 (100) (2) (0.1) (900) Polymer 12 PAG1tributylamine PGMEA 29 100 (100) (2) (0.1) (900) Polymer 13 PAG1tributylamine PGMEA 40 100 (100) (2) (0.1) (900) Polymer 14 PAG1tributylamine PGMEA 30 95 (100) (2) (0.1) (900) Polymer 15 PAG1tributylamine PGMEA 38 100 (100) (2) (0.1) (900) Polymer 16 PAG1tributylamine PGMEA 41 100 (100) (2) (0.1) (900) Polymer 17 PAG1tributylamine PGMEA 37 100 (100) (2) (0.1) (900) Polymer 18 PAG1tributylamine PGMEA 29 95 (100) (2) (0.1) (900) Comparative Polymer 19PAG1 tributylamine PGMEA 39 105 Example (100) (2) (0.1) (900) Polymer 20PAG1 tributylamine PGMEA 44 115 (100) (2) (0.1) (900)

In Table 2, a comparison of resolution is made between polymers havingthe identical acid labile group in order to eliminate the effect of acidlabile group on resolution. The maximum resolution of a composition ofComparative Example based on a polymer having only fluorinated alcoholas a polar group (Polymer 19), possessing an anti-swelling capabilityand affording a high resolution can be reproduced by compositions usingpolymers having partially replaced therein lactone structure-containingpolar groups (Polymers 1-4, 7, 8, 11, 13, 15, 16). By contrast, acomposition using a polymer having some polar groups replaced by ester(Polymer 20) failed to achieve a high resolution due to pattern collapseprobably by swelling.

A further comparison between a resin having a linker on the chain and aresin having a lactone ring directly bonded to an alicyclic structuredemonstrates that the latter resin provides a higher resolution (as seenfrom a comparison of Polymers 1-4, 7 and 8 with Polymer 11, and acomparison of Polymers 6, 9 and 10 with Polymer 12).

Etching Test

A positive resist-forming coating solution was prepared by dissolving100 parts by weight of a polymer (Polymer 1, 7, 9 or 19), 2.0 parts byweight of a photoacid generator (PAG1: triphenylsulfoniumnonafluoro-n-butanesulfonate), 0.2 part by weight of triethanolamine,and 0.1 part by weight of a surfactant X-70-093 (Shin-Etsu Chemical Co.,Ltd.) in 900 parts by weight of PGMEA, followed by filtration through afilter having a pore diameter of 0.2 μm. The resist solution was spincoated onto a silicon wafer and baked at 110° C. for 90 seconds to forma resist film of 200 nm thick. The wafer having the resist film formedthereon was subjected to dry etching. A difference in resist filmthickness before and after the etching test was determined. Using a dryetching instrument TE-8500P by Tokyo Electron Ltd., the resist film wasetched with oxygen gas under the conditions: chamber pressure 60 Pa, RFpower 600 W, Ar gas flow rate 40 ml/min, O₂ gas flow rate 60 ml/min, gap9 mm, and etching time 60 seconds. The results are shown in Table 3.

TABLE 3 Polymer O₂ gas etching rate (nm/min) Polymer 1 11 Polymer 7 10Polymer 9 12 Polymer 19 (Comparison) 240

It is demonstrated that the partial substitution of lactone structuresfor fluorinated alcohol units improves the etching resistance of resistunder oxygen reactive etching conditions.

The resist composition of the invention has solved the problem of a lowselective etching ratio between a resist film and an organic film duringoxygen reactive etching that a prior art resist composition using aresin having fluorinated alcohol as a polar group suffers from. Itprevents swelling while maintaining necessary physical properties andensures a resolution comparable to that of the prior art resistcomposition. The invention thus offers a suitable material and substrateprocessing method for use in the bilayer resist process.

Japanese Patent Application No. 2006-035111 is incorporated herein byreference.

Although some preferred embodiments have been described, manymodifications and variations may be made thereto in light of the aboveteachings. It is therefore to be understood that the invention may bepracticed otherwise than as specifically described without departingfrom the scope of the appended claims.

1. A resist composition comprising (A) a silicone resin, (B) an acidgenerator, (C) an organic nitrogen-containing compound, and (D) anorganic solvent, said silicone resin (A) being obtained throughcohydrolytic condensation of a mixture comprising hydrolyzable silanemonomers having the general formulae (1), (2) and (3):

wherein R¹, R², and R³ each are hydrogen, fluorine, C₁-C₄ alkyl or C₁-C₄fluoroalkyl group, at least one of R¹, R², and R³ contains fluorine, R⁴is a C₁-C₆ hydrocarbon group with a straight, branched or cyclicstructure, R⁵ is a C₃-C₂₀ organic group with a straight, branched,cyclic or polycyclic structure, which has a carboxyl group protectedwith an acid-decomposable protecting group as a functional group andwhich may further contain a halogen, oxygen or sulfur atom, R⁶ is asdefined for R⁴, R⁷ is a C₄-C₁₆ organic group which has a lactone ring asa functional group and which may further contain a halogen, oxygen orsulfur atom, R⁸ is as defined for R⁴, X is hydrogen, chlorine, bromine,or a straight, branched or cyclic C₁-C₆ alkoxy group, p is 0 or 1, q is0 or 1, and r is 0 or 1,
 2. The resist composition of claim 1, whereinthe silane monomer of formula (1) is a silane monomer having thestructure (4):

wherein R⁴ and X are as defined above, and n is 0 or
 1. 3. The resistcomposition of claim 1, wherein in formula (3), R⁷ is an organic grouphaving an alicyclic structure and a 5-membered lactone structure bondedthereto, and the silicon atom is bonded to one of carbon atoms in thealicyclic structure.
 4. The resist composition of claim 1, wherein thesilane monomer of formula (3) is a silane monomer having the structure(5) or (6):

wherein Y is an oxygen atom, sulfur atom or methylene group, R⁸ and Xare as defined above, n is 0 or 1, and m is 0 or
 1. 5. The resistcomposition of claim 1, wherein said mixture further comprises ahydrolyzable monomer having at least two hydrolyzable substituent groupsother than formulae (1), (2) and (3).
 6. The resist composition of claim1, wherein said mixture further comprises a compound having the generalformula (7):SiX₄  (7) wherein X is as defined above.
 7. A pattern forming processcomprising the steps of: forming a pattern on an aromatic-containingresin film using the resist composition of claim 1, and etching theresin film through the resulting pattern as an etching mask for therebypatterning the resin film.
 8. The pattern forming process of claim 7,wherein the etching step uses a gas plasma containing oxygen.